Precision vacuum measurement and control: Real-time pressure monitoring is achieved using vacuum gauges (capacitive diaphragm gauges, thermal conductivity gauges, ionization gauges), combined with valve regulation to enable closed-loop control of process pressure.

Plasma generation and control: Plasma is excited in a vacuum using radio frequency (RF) and direct current (DC) power supplies, with ion energy and density controlled to regulate the microstructure and properties of the thin film.

Substrate temperature control: Precise control of wafer temperature during thin film deposition influences the film's stress, density, and crystal orientation.

[Core Performance]Film Uniformity: The thickness deviation on a 300mm wafer can be controlled within 1%, serving as the key guarantee for yield.

Step coverage: Advanced processes require continuous and uniform film coverage on the sidewalls of trenches or vias with high aspect ratios, where ALD technology demonstrates exceptional performance.

Impurity control: The vacuum environment effectively reduces the levels of impurities such as oxygen and carbon in the thin film, enhancing device reliability.

Interface steepness: The multilayer film structure requires clear interlayer interfaces and minimal mutual diffusion, imposing stringent demands on vacuum ventilation and pumping speed.